BC846SH6327XTSA1

BC846S 系列 NPN 65 V 100 mA 表面贴装 硅 AF 晶体管 阵列 - SOT-363

小信号 NPN ，

得捷:
TRANS 2NPN 65V 0.1A SOT363

欧时:
Infineon BC846SH6327XTSA1, 双 NPN 晶体管, 100 mA, Vce=65 V, HFE:200, 250 MHz, 6引脚 SOT-363 SC-88封装

艾睿:
Compared to other transistors, the NPN BC846SH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT NPN 65V 0.1A Automotive 6-Pin SOT-363 T/R

Verical:
Trans GP BJT NPN 65V 0.1A 250mW Automotive 6-Pin SOT-363 T/R

Win Source:
TRANS 2NPN 65V 0.1A SOT363