单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
通用 NPN ,
欧时:
Infineon BC817K40E6327HTSA1 , NPN 晶体管, 500 mA, Vce=45 V, HFE:630, 170 MHz, 3引脚 SOT-23封装
得捷:
TRANS NPN 45V 0.5A SOT23
贸泽:
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5
艾睿:
The versatility of this NPN BC817K40E6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Chip1Stop:
Trans GP BJT NPN 45V 0.5A Automotive 3-Pin SOT-23 T/R
Verical:
Trans GP BJT NPN 45V 0.5A 500mW Automotive 3-Pin SOT-23 T/R
Win Source:
TRANS NPN 45V 0.5A SOT-23
频率 170 MHz
极性 NPN
耗散功率 500 mW
增益频宽积 170 MHz
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 250 @100mA, 1V
最大电流放大倍数hFE 630
额定功率Max 500 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 1 mm
封装 SOT-23-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
制造应用 For general AF applications
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
BC817K40E6327HTSA1 Infineon 英飞凌 | 当前型号 | 当前型号 |
BC817K40E6433HTMA1 英飞凌 | 类似代替 | BC817K40E6327HTSA1和BC817K40E6433HTMA1的区别 |
BC 817-40 B5003 英飞凌 | 类似代替 | BC817K40E6327HTSA1和BC 817-40 B5003的区别 |
BC 817-40 E6433 英飞凌 | 类似代替 | BC817K40E6327HTSA1和BC 817-40 E6433的区别 |