晶体管 双极-射频, NPN, 2.6 V, 125 mW, 55 mA, 150 hFE
In addition to offering the benefits of traditional BJTs, the RF amplifier from Technologies is perfect for high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.
得捷:
BFP843 - ULTRA LOW-NOISE SIGE:C
贸泽:
射频RF双极晶体管 RF BIP TRANSISTORS
艾睿:
Trans RF BJT NPN 2.25V 0.055A Automotive 4-Pin TSFP
安富利:
Trans GP BJT NPN 2.25V 0.055A 4-Pin TSFP T/R
Chip1Stop:
ROBUST LOW NOISE BROADBAND PRE-MATCHED BIPOLAR RF TRANSISTOR
针脚数 4
耗散功率 125 mW
输入电容 0.7 pF
击穿电压集电极-发射极 2.25 V
增益 13.5dB ~ 25dB
最小电流放大倍数hFE 150 @15mA, 1.8V
额定功率Max 125 mW
直流电流增益hFE 150
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125 mW
安装方式 Surface Mount
引脚数 4
封装 TSFP-4-1
封装 TSFP-4-1
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Dedicated short range communication DSRC systems: WLAN IEEE802.11p
RoHS标准 RoHS Compliant
含铅标准 Lead Free