BSC090N03LSGATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC090N03LSGATMA1, 48 A, Vds=30 V, 8引脚 TDSON封装

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 13A/48A TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC090N03LSGATMA1, 48 A, Vds=30 V, 8引脚 TDSON封装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSC090N03LSGATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

TME:
Transistor: N-MOSFET; unipolar; 30V; 39A; 32W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R

Win Source:
MOSFET N-CH 30V 48A TDSON-8