BD138G

ON SEMICONDUCTOR  BD138G  Bipolar BJT Single Transistor, PNP, 60 V, 12.5 W, 1.5 A, 25 hFE 新

The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.