BFG520

NXP  BFG520  晶体管 双极-射频, NPN, 15 V, 9 GHz, 300 mW, 70 mA, 120 hFE

The is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic envelope. The device is intended for applications in the RF frontend in the GHz range, such as analogue and digital cellular telephones, cordless telephones CT1, CT2, DECT, radar detectors, pagers and satellite TV tuners SATV and repeater amplifiers in fibre-optic systems.

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High power gain

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Low noise figure

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High transition frequency

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Gold metallization ensures excellent reliability