NXP BUK762R6-60E 晶体管, MOSFET, N沟道, 120 A, 60 V, 1970 µohm, 10 V, 3 V
The is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
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- Repetitive avalanche rated
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- Suitable for thermally demanding environments due to 175°C rating
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- True standard level gate with VGS th rating of greater than 1V at 175°C
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- -55 to 175°C Junction temperature range
针脚数 3
漏源极电阻 0.00197 Ω
极性 N-Channel
耗散功率 324 W
阈值电压 3 V
漏源极电压Vds 60 V
工作温度Max 175 ℃
工作温度Min -55 ℃
引脚数 3
封装 TO-263
封装 TO-263
工作温度 -55℃ ~ 175℃
产品生命周期 Unknown
制造应用 Automation & Process Control, Lighting, Automotive, Power Management, Motor Drive & Control, Industrial
RoHS标准 Non-Compliant
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
BUK762R6-60E NXP 恩智浦 | 当前型号 | 当前型号 |
SQM120N06-04L-GE3 威世 | 功能相似 | BUK762R6-60E和SQM120N06-04L-GE3的区别 |