BSC080N03MS G

INFINEON  BSC080N03MS G  晶体管, MOSFET, N沟道, 53 A, 30 V, 6.7 mohm, 10 V, 1 V

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

立创商城:
BSC080N03MS G

得捷:
MOSFET N-CH 30V 53A TDSON-8

贸泽:
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M

安富利:
With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs and system in package.Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.Available in halfbridge configuration power stage 3x3, power stage 5x6.

Chip1Stop:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP

儒卓力:
**N-CH 30V 53A 8.0mOhm TDSON-8 **

DeviceMart:
MOSFET N-CH 30V 53A TDSON-8