DTA115EM3T5G

DTA115EM3T5G图片1
DTA115EM3T5G图片2
DTA115EM3T5G图片3
DTA115EM3T5G图片4
DTA115EM3T5G图片5
DTA115EM3T5G概述

数字晶体管( BRT ) PNP硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−723 package which is designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• The SOT−723 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

DTA115EM3T5G中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -100 mA

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.6 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

最大电流放大倍数hFE 80

额定功率Max 260 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 600 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-723-3

外形尺寸

长度 1.2 mm

宽度 0.8 mm

高度 0.5 mm

封装 SOT-723-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买DTA115EM3T5G
型号: DTA115EM3T5G
描述:数字晶体管( BRT ) PNP硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

锐单商城 - 一站式电子元器件采购平台