








数字晶体管( BRT ) PNP硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
- 双极 BJT - 单,预偏置 PNP - 预偏压 表面贴装型 SOT-723
得捷:
TRANS PREBIAS PNP 50V SOT723
立创商城:
DTA124EM3T5G
贸泽:
双极晶体管 - 预偏置 100mA 50V BRT PNP
艾睿:
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor&s;s PNP DTA124EM3T5G digital transistor. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-723 T/R
Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-723 T/R
Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-723 T/R
Newark:
# ON SEMICONDUCTOR DTA124EM3T5G Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 Ratio, SOT-723
额定电压DC -50.0 V
额定电流 -100 mA
无卤素状态 Halogen Free
极性 PNP
耗散功率 0.6 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 60 @5mA, 10V
最大电流放大倍数hFE 60
额定功率Max 260 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 600 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-723-3
长度 1.2 mm
宽度 0.8 mm
高度 0.5 mm
封装 SOT-723-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DTA124EM3T5G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
DTA124TMT2L 罗姆半导体 | 功能相似 | DTA124EM3T5G和DTA124TMT2L的区别 |