N沟道,Vdss=60V,Idss=100mA
表面贴装型 N 通道 100mA(Ta) 470mW(Ta) 3-X1DFN1006
得捷:
MOSFET N-CH 60V X2-DFN1006-3
立创商城:
N沟道 60V 100mA
贸泽:
MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R; 3K
艾睿:
Make an effective common source amplifier using this DMN62D0LFB-7 power MOSFET from Diodes Zetex. Its maximum power dissipation is 470 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
安富利:
Trans MOSFET N-CH 60V 0.1A 3-Pin DFN T/R
Chip1Stop:
Trans MOSFET N-CH 60V 0.1A 3-Pin DFN T/R
Verical:
Trans MOSFET N-CH 60V 0.1A Automotive 3-Pin DFN T/R
Win Source:
MOSFET N-CH 60V X2-DFN1006-3
极性 N-CH
耗散功率 0.5 W
漏源极电压Vds 60 V
连续漏极电流Ids 0.1A
上升时间 3.4 ns
输入电容Ciss 32pF @25VVds
额定功率Max 470 mW
下降时间 16.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 DFN-3
长度 1 mm
封装 DFN-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC