







双极晶体管 - 预偏置
双极 - 预偏置
得捷:
TRANS 2NPN PREBIAS 0.15W SOT563
艾睿:
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN DDC114EH-7 digital transistor from Diodes Zetex is your solution. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. Its maximum power dissipation is 150 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans Digital BJT NPN 100mA 6-Pin SOT-563 T/R
Chip1Stop:
Trans Digital BJT NPN 100mA 6-Pin SOT-563 T/R
Verical:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-563 T/R
Win Source:
TRANS 2NPN PREBIAS 0.15W SOT563
额定功率 0.15 W
极性 NPN
耗散功率 0.15 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 30 @5mA, 5V
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
增益带宽 250 MHz
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-563
长度 1.6 mm
宽度 1.2 mm
高度 0.6 mm
封装 SOT-563
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
DDC114EH-7 Diodes 美台 | 当前型号 | 当前型号 |
EMH11T2R 罗姆半导体 | 功能相似 | DDC114EH-7和EMH11T2R的区别 |