DSS4160U 系列 60 V 1 A 低 VCESAT NPN 表面贴装 晶体管 - SOT-323
Implement this versatile NPN GP BJT from Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
频率 150 MHz
极性 NPN
耗散功率 400 mW
击穿电压集电极-发射极 60 V
最小电流放大倍数hFE 200 @500mA, 5V
额定功率Max 400 mW
直流电流增益hFE 250
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 400 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-323
封装 SOT-323
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
DSS4160U-7 Diodes 美台 | 当前型号 | 当前型号 |
PBSS4160U,115 恩智浦 | 功能相似 | DSS4160U-7和PBSS4160U,115的区别 |