FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 84nC Typical low gate charge
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- 320pF Typical low Crss
额定电压DC -60.0 V
额定电流 -47.0 A
针脚数 2
漏源极电阻 0.026 Ω
极性 P-Channel
耗散功率 160 W
漏源极电压Vds 60 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids -47.0 A
上升时间 450 ns
输入电容Ciss 3600pF @25VVds
额定功率Max 3.75 W
下降时间 195 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.75 W
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB47P06TM_AM002 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQB47P06TM 飞兆/仙童 | 类似代替 | FQB47P06TM_AM002和FQB47P06TM的区别 |
FQB47P06TM-AM002 安森美 | 功能相似 | FQB47P06TM_AM002和FQB47P06TM-AM002的区别 |
IRF5210STRRPBF 国际整流器 | 功能相似 | FQB47P06TM_AM002和IRF5210STRRPBF的区别 |