FAIRCHILD SEMICONDUCTOR FDD8880 晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
The is a N-channel MOSFET produced using Semiconductor"s proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
- .
- High performance Trench technology for extremely low RDS ON
- .
- Low gate charge
- .
- High power and current handling capability
额定电压DC 30.0 V
额定电流 58.0 A
通道数 1
针脚数 3
漏源极电阻 0.007 Ω
极性 N-Channel
耗散功率 55 W
阈值电压 2.5 V
输入电容 1.26 nF
栅电荷 23.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 58.0 A
上升时间 91 ns
输入电容Ciss 1260pF @15VVds
额定功率Max 55 W
下降时间 32 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 55W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD8880 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDD6680A 飞兆/仙童 | 类似代替 | FDD8880和FDD6680A的区别 |
FDD6680 飞兆/仙童 | 类似代替 | FDD8880和FDD6680的区别 |
FDD7030BL 飞兆/仙童 | 类似代替 | FDD8880和FDD7030BL的区别 |