FAIRCHILD SEMICONDUCTOR FDS6912A 双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
The is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.
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- Fast switching speed
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- Low gate charge
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- High performance trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±20V Gate source voltage VGSS
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- 78°C/W Thermal resistance, junction to ambient
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- 40°C/W Thermal resistance, junction to case
额定电压DC 30.0 V
额定电流 6 A
额定功率 1.6 W
针脚数 8
漏源极电阻 0.019 Ω
极性 N-Channel, Dual N-Channel
耗散功率 1.6 W
阈值电压 1.9 V
输入电容 575 pF
栅电荷 5.80 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 6.00 A
上升时间 5 ns
输入电容Ciss 575pF @15VVds
额定功率Max 900 mW
下降时间 5 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 1.6 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6912A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
NDS8410A 飞兆/仙童 | 类似代替 | FDS6912A和NDS8410A的区别 |
NTMD6N03R2G 安森美 | 功能相似 | FDS6912A和NTMD6N03R2G的区别 |
STS8DNF3LL 意法半导体 | 功能相似 | FDS6912A和STS8DNF3LL的区别 |