FAIRCHILD SEMICONDUCTOR FCH47N60N 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.0515 ohm, 10 V, 2 V
The is a N-channel SupreMOS® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- .
- Ultra low gate charge Qg = 115nC
- .
- Low effective output capacitance Coss.eff = 511pF
- .
- 100% avalanche tested
针脚数 3
漏源极电阻 0.0515 Ω
极性 N-Channel
耗散功率 368 W
阈值电压 2 V
漏源极电压Vds 600 V
连续漏极电流Ids 47A
上升时间 9 ns
输入电容Ciss 6700pF @100VVds
额定功率Max 368 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 368W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.95 mm
宽度 5.03 mm
高度 20.82 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCH47N60N Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STW48NM60N 意法半导体 | 功能相似 | FCH47N60N和STW48NM60N的区别 |