FDD6035AL

N沟道逻辑电平的PowerTrench MOSFET N-Channel, Logic Level, PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Semiconductor’s advanced  PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

·  46 A, 30 V RDSON= 12 mW@ VGS= 10 V

                RDSON= 14 mW@ VGS= 4.5 V

·  Low gate charge

·  Fast Switching Speed

·  High performance trench technology for extremely low RDSON