FQP16N25C

250V N沟道MOSFET 250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features

• 15.6A, 250V, RDSon = 0.27Ω @VGS = 10 V

• Low gate charge typical 41 nC

• Low Crss typical 68 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability