晶体管, IGBT阵列&模块, N沟道, 150 A, 1.95 V, 835 W, 1.7 kV, Module
Summary of Features:
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Extended Operation Temperature Tvj op
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Low VCEsat
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VCEsat with positive Temperature Coefficient
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High Power Density
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Isolated Base Plate
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Standard Housing
Benefits:
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Compact Modules
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Easy and most reliable assembly
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No Plugs and Cables required
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Ideal for Low Inductive System Designs