IPD053N06NATMA1

INFINEON  IPD053N06NATMA1  晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V

OptiMOS™5 功率 MOSFET

得捷:
MOSFET N-CH 60V 18A/45A TO252-3

欧时:
Infineon OptiMOS 5 系列 Si N沟道 MOSFET IPD053N06NATMA1, 45 A, Vds=60 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET N-Ch 60V 45A DPAK-2

e络盟:
功率场效应管, MOSFET, N沟道, 60 V, 45 A, 0.0045 ohm, TO-252 DPAK, 表面安装

艾睿:
Make an effective common source amplifier using this IPD053N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 60V 45A 3-Pin TO-252 T/R

Chip1Stop:
Trans MOSFET N-CH 60V 45A 3-Pin2+Tab TO-252 T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3

Verical:
Trans MOSFET N-CH 60V 45A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD053N06NATMA1  MOSFET Transistor, N Channel, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V