MOSFET, Power; N-Ch; VDSS 55V; RDSON 11.1 Milliohms; ID 51A; TO-220AB; PD 80W; -55deg
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
**Features:
**
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed Up to Tj Max.
* Lead-Free
额定电压DC 55.0 V
额定电流 51.0 A
通道数 1
漏源极电阻 13.9 mΩ
极性 N-Channel
耗散功率 80 W
产品系列 IRFZ44Z
阈值电压 4 V
输入电容 1420pF @25V
漏源极电压Vds 55 V
漏源击穿电压 55 V
连续漏极电流Ids 51.0 A
上升时间 68.0 ns
输入电容Ciss 1420pF @25VVds
额定功率Max 80 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
高度 9.65 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFZ44ZPBF International Rectifier 国际整流器 | 当前型号 | 当前型号 |
STP65NF06 意法半导体 | 功能相似 | IRFZ44ZPBF和STP65NF06的区别 |
STP80NF55-08 意法半导体 | 功能相似 | IRFZ44ZPBF和STP80NF55-08的区别 |
STP85NF55 意法半导体 | 功能相似 | IRFZ44ZPBF和STP85NF55的区别 |