IRLR2905PBF

INTERNATIONAL RECTIFIER  IRLR2905PBF  场效应管, N 通道, MOSFET, 55V, 42A, D-PAKS 新

VDSS= 55V

RDSon= 0.027Ω

ID= 42A

Description

Fifth Generation HEXFETs from utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Logic-Level Gate Drive

Ultra Low On-Resistance

Surface Mount IRLR2905

Straight Lead IRLU2905

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

Lead-Free