MOSFET, Power; N-Ch; VDSS 75V; RDSON 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
**N-Channel Power MOSFET over 100A, Infineon**
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
艾睿:
Trans MOSFET N-CH 80V 170A 3-Pin3+Tab TO-247AC Tube
Allied Electronics:
MOSFET, Power; N-Ch; VDSS 75V; RDSON 4.5Milliohms; ID 170A; TO-247AC; PD 310W; -55de
额定电压DC 75.0 V
额定电流 90.0 A
通道数 1
漏源极电阻 4.5 mΩ
极性 N-Channel
耗散功率 310 W
产品系列 IRFP2907Z
阈值电压 4 V
输入电容 7500pF @25V
漏源极电压Vds 75 V
漏源击穿电压 75 V
连续漏极电流Ids 90.0 A
上升时间 140 ns
输入电容Ciss 7500pF @25VVds
额定功率Max 310 W
工作温度Max 175 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.7 mm
封装 TO-247-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC