INFINEON IPP200N25N3GXKSA1 晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
OptiMOS™3 功率 MOSFET，100V 及以上
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPP200N25N3GXKSA1, 64 A, Vds=250 V, 3引脚 TO-220封装
得捷:
MOSFET N-CH 250V 64A TO220-3
艾睿:
Create an effective common drain amplifier using this IPP200N25N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
Chip1Stop:
Trans MOSFET N-CH 250V 64A 3-Pin3+Tab TO-220 Tube
TME:
Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Verical:
Trans MOSFET N-CH 250V 64A 3-Pin3+Tab TO-220 Tube
Newark:
# INFINEON IPP200N25N3GXKSA1 MOSFET Transistor, N Channel, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
额定功率 300 W
通道数 1
针脚数 3
漏源极电阻 0.0175 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 3 V
漏源极电压Vds 250 V
连续漏极电流Ids 64A
上升时间 20 ns
输入电容Ciss 5340pF @100VVds
下降时间 12 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.4 mm
高度 4.57 mm
封装 TO-220-3
产品生命周期 Active
包装方式 Tube
制造应用 Industrial, 电源管理, Lighting, 工业, Isolated DC-DC converters, Synchronous rectification for AC-DC SMPS, 照明, Audio, 电机驱动与控制, Motor Drive & Control, Class D audio amplifiers, 音频, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17