IX21844N

IX21844N图片1
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IX21844N概述

Driver 600V 2.5A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 14Pin SOIC N Tube

Switch between states in a high power transistor by using this power driver developed by Ixys Corporation. This device has a maximum propagation delay time of 900 ns and a maximum power dissipation of 1000 mW. Its maximum power dissipation is 1000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has an operating temperature range of -40 °C to 125 °C.

IX21844N中文资料参数规格
技术参数

上升/下降时间 23ns, 14ns

输出接口数 2

耗散功率 1000 mW

下降时间Max 35 ns

上升时间Max 60 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

耗散功率Max 1000 mW

电源电压 10V ~ 20V

封装参数

安装方式 Surface Mount

引脚数 14

封装 SOIC-14

外形尺寸

封装 SOIC-14

物理参数

工作温度 -40℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IX21844N
型号: IX21844N
制造商: IXYS Semiconductor
描述:Driver 600V 2.5A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 14Pin SOIC N Tube
替代型号IX21844N
型号/品牌 代替类型 替代型号对比

IX21844N

IXYS Semiconductor

当前型号

当前型号

IX21844NTR

IXYS Semiconductor

类似代替

IX21844N和IX21844NTR的区别

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