IS62WV1288DBLL-45QLI

INTEGRATED SILICON SOLUTION ISSI  IS62WV1288DBLL-45QLI  芯片, 存储器, SRAM, 1MB, 45NS, 32SOP

The is a 128K x 8-bit low voltage high-speed CMOS Static Random Access Memory SRAM fabricated using ISSIs high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH deselected or when CS2 is low deselected, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs. The active LOW write enable WE controls both writing and reading of the memory.

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High-speed access time - 45ns

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CMOS low power operation

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TTL compatible interface levels

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Fully static operation - no clock or refresh required

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3-State outputs