High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC packagem
Description
The IR2308S are high voltage, high speed power MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rug
gedized monolithic construction.
Features
•Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
•Gate drive supply range from 10 to 20V
•Undervoltage lockout for both channels
•3.3V, 5V and 15V input logic compatible
•Cross-conduction prevention logic
•Matched propagation delay for both channels
•Outputs in phase with inputs
•Logic and power ground +/- 5V offset.
•Internal 540ns dead-time
•Lower di/dt gate driver for better noise immunity
•Also available LEAD_FREE