200V N沟道MOSFET 200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary,
planar, DMOS technology.
Features
• 32A, 200V, RDSon= 0.085Ω@VGS= 10 V
• Low gate charge typical 95 nC
• Low Crss typical 75 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFP250B Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STD86N3LH5 意法半导体 | 功能相似 | IRFP250B和STD86N3LH5的区别 |