IPA70R360P7S

IPA70R360P7S图片1
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IPA70R360P7S概述

N沟道 700V 12.5A

Description:

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

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Efficiency and thermals
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Ease-of-use
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EMI behavior

Summary of Features:

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Extremely low FOM R DSon x E oss; lower Q g, E on and E off
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Highly performant technology
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Low switching losses E oss
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Highly efficient
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Excellent thermal behavior
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Allowing high speed switching
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Integrated protection Zener diode
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Optimized V GSth of 3V with very narrow tolerance of ±0.5V
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Finely graduated portfolio

Benefits:

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Cost competitive technology
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Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
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Further efficiency gain at higher switching speed
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Supporting less magnetic size with lower BOM costs
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High ESD ruggedness up to HBM Class 2 level
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Easy to drive and design-in
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Enabler for smaller form factors and high power density designs
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Excellent choice in selecting the best fitting product
IPA70R360P7S中文资料参数规格
技术参数

耗散功率 26.5 W

上升时间 8 ns

输入电容Ciss 517pF @400VVds

下降时间 18 ns

工作温度Max 150 ℃

工作温度Min -40 ℃

耗散功率Max 26500 mW

封装参数

封装 TO-220

外形尺寸

封装 TO-220

物理参数

工作温度 -40℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Rail, Tube

制造应用 Aux power

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

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型号: IPA70R360P7S
描述:N沟道 700V 12.5A

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