FAIRCHILD SEMICONDUCTOR J112 晶体管, JFET, JFET, -35 V, 5 mA, 5 V, TO-92, JFET
The from is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers.
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- Source and drain are interchangeable
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- Gate to source breakdown voltage of 35V
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- Gate to source cutoff voltage of 5V
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- Zero gate voltage drain current of 5mA
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- Power dissipation pd of 625mW
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- Operating junction temperature of -55°C to 150°C
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- Drain source on resistance of 50 Ohm
额定电压DC 35.0 V
额定电流 50.0 mA
额定功率 350 mW
击穿电压 -35.0 V
漏源极电阻 50 Ω
极性 N-Channel
耗散功率 625 mW
漏源极电压Vds 35.0 V
栅源击穿电压 35.0 V
连续漏极电流Ids 5.00 mA
击穿电压 35 V
额定功率Max 625 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-226-3
长度 5.2 mm
宽度 4.19 mm
高度 5.33 mm
封装 TO-226-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Bulk
制造应用 Power Management, Consumer Electronics, Portable Devices, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
J112 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
J112_D26Z 飞兆/仙童 | 完全替代 | J112和J112_D26Z的区别 |
J111 飞兆/仙童 | 类似代替 | J112和J111的区别 |
J112_D27Z 安森美 | 类似代替 | J112和J112_D27Z的区别 |