JANTX2N6350

NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR

This high speed NPN transistor is military qualified up to the JANTXV level.  This TO-33 leaded top-hat has three isolated terminals with terminal four, the collector terminal, tied to the case.

贸泽:
Darlington Transistors Power BJT

艾睿:
Amplify your current using Microsemi&s;s NPN JANTX2N6350 Darlington transistor in order to yield a higher current gain. This product&s;s maximum continuous DC collector current is 5 A, while its minimum DC current gain is 2000@1A@5 V|2000@5A@5V|400@10A@5V. It has a maximum collector emitter saturation voltage of 1.5@5mA@5A V. This Darlington transistor array&s;s maximum emitter base voltage is 12 V. Its maximum power dissipation is 1000 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 12 V.

Chip1Stop:
Trans Darlington NPN 80V 5A 4-Pin TO-33

Verical:
Trans Darlington NPN 80V 5A 1000mW 4-Pin TO-33 Box