此系列高频，外延平面型晶体管具有低饱和电压。 This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA- .
- * ** packaging. also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
频率 40 MHz
耗散功率 800 mW
击穿电压集电极-发射极 350 V
最小电流放大倍数hFE 40 @20mA, 10V
最大电流放大倍数hFE 160 @20mA, 10V
额定功率Max 800 mW
工作温度Max 200 ℃
工作温度Min -55 ℃
耗散功率Max 800 mW
安装方式 Through Hole
引脚数 3
封装 TO-39-3
封装 TO-39-3
材质 Silicon
工作温度 -65℃ ~ 200℃ TJ
产品生命周期 Active
包装方式 Bulk
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JAN2N3439 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANS2N3439 美高森美 | 完全替代 | JAN2N3439和JANS2N3439的区别 |
JANTXV2N3439L 美高森美 | 类似代替 | JAN2N3439和JANTXV2N3439L的区别 |
JANTX2N3439UA 美高森美 | 类似代替 | JAN2N3439和JANTX2N3439UA的区别 |