PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
brings you the solution to your high-voltage BJT needs with their PNP general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 175 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
JANTXV2N3637 Microsemi 美高森美 | 当前型号 | 当前型号 |
JANTX2N3637 美高森美 | 完全替代 | JANTXV2N3637和JANTX2N3637的区别 |
2N3637L 美高森美 | 类似代替 | JANTXV2N3637和2N3637L的区别 |
JANSR2N3637 美高森美 | 类似代替 | JANTXV2N3637和JANSR2N3637的区别 |