K4T1G164QF-BCF7

K4T1G164QF-BCF7图片1
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K4T1G164QF-BCF7概述

DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin FBGA

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin DDR2-800 for general applications.

The chip is designed to comply with the following key DDR2 SDRAM fea tures such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip DriverOCD impedance adjustment and On Die Termination.


力源芯城:
1Gb 64M x 16 DDR2 SDRAM


Win Source:
1Gb F-die DDR2 SDRAM


K4T1G164QF-BCF7中文资料参数规格
封装参数

安装方式 Surface Mount

封装 BGA

外形尺寸

封装 BGA

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

香港进出口证 NLR

数据手册

在线购买K4T1G164QF-BCF7
型号: K4T1G164QF-BCF7
制造商: Samsung 三星
描述:DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin FBGA

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