K9F1208U0M-YIB0

64M x 8Bit NAND Flash Memory

General Description

The K9F1208U0M is a 64M67,108,864x8bit NAND Flash Memory with a spare 2,048K2,097,152x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Features

· Voltage Supply : 2.7V~3.6V

· Organization

   - Memory Cell Array : 64M + 2,048Kbit x 8bit

   - Data Register : 512 + 16bit x8bit multipled by four planes

· Automatic Program and Erase

   - Page Program : 512 + 16Byte

   - Block Erase : 16K + 512Byte

· 528-Byte Page Read Operation

   - Random Access : 12msMax.

   - Serial Page Access : 50nsMin.

· Fast Write Cycle Time

   - Program time : 200msTyp.

   - Block Erase Time : 2msTyp.

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

   - Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

   - Endurance : 100K Program/Erase Cycles

   - Data Retention : 10 Years

· Command Register Operation

· Intelligent Copy-Back Operation

· Package :

   - K9F1208U0M-YCB0, : 48 - Pin TSOP I 12 x 20 / 0.5 mm pitch

· Simultaneous Four Page/Block Program/Erase