K6T1008C2E-GB70

K6T1008C2E-GB70图片1
K6T1008C2E-GB70图片2
K6T1008C2E-GB70概述

SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32Pin SOP

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 128Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

·Three state output and TTL Compatible

·Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R

K6T1008C2E-GB70中文资料参数规格
技术参数

电源电压 5 V

封装参数

安装方式 Surface Mount

封装 SOP

外形尺寸

封装 SOP

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买K6T1008C2E-GB70
型号: K6T1008C2E-GB70
制造商: Samsung 三星
描述:SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32Pin SOP
替代型号K6T1008C2E-GB70
型号/品牌 代替类型 替代型号对比

K6T1008C2E-GB70

Samsung 三星

当前型号

当前型号

KM681000BLG-7L

三星

完全替代

K6T1008C2E-GB70和KM681000BLG-7L的区别

M5M51008CFP-70H

三菱

类似代替

K6T1008C2E-GB70和M5M51008CFP-70H的区别

M5M51008BFP-70LL

三菱

类似代替

K6T1008C2E-GB70和M5M51008BFP-70LL的区别

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