K6T1008C2E-TB70

K6T1008C2E-TB70概述

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 128Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

·Three state output and TTL Compatible

·Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R

K6T1008C2E-TB70中文资料参数规格
封装参数

封装 TSOP1

外形尺寸

封装 TSOP1

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买K6T1008C2E-TB70
型号: K6T1008C2E-TB70
制造商: Samsung 三星
描述:128Kx8 bit Low Power CMOS Static RAM
替代型号K6T1008C2E-TB70
型号/品牌 代替类型 替代型号对比

K6T1008C2E-TB70

Samsung 三星

当前型号

当前型号

KM681000CLT-7L

三星

功能相似

K6T1008C2E-TB70和KM681000CLT-7L的区别

KM681000BLT-7L

三星

功能相似

K6T1008C2E-TB70和KM681000BLT-7L的区别

M5M51008BVP-70LL

三菱

功能相似

K6T1008C2E-TB70和M5M51008BVP-70LL的区别

锐单商城 - 一站式电子元器件采购平台