K6T1008C2E-DB55

1Mbit SRAM 55ns 32-DIP - K6T1008C2E-DB55

GENERAL DESCRIPTION

The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 128Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

·Three state output and TTL Compatible

·Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R