K6T0808C1D-DB70

K6T0808C1D-DB70图片1
K6T0808C1D-DB70概述

512Kbit SRAM 70ns 28-DIP - K6T0808C1D-DB70

GENERAL DESCRIPTION

The K6T0808C1D families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back up operation with low data retention current.

FEATURES

·Process Technology: TFT

·Organization: 32Kx8

·Power Supply Voltage: 4.5~5.5V

·Low Data Retention Voltage: 2VMin

·Three state output and TTL Compatible

·Package Type: 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/R

K6T0808C1D-DB70中文资料参数规格
封装参数

封装 DIP

外形尺寸

封装 DIP

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买K6T0808C1D-DB70
型号: K6T0808C1D-DB70
制造商: Samsung 三星
描述:512Kbit SRAM 70ns 28-DIP - K6T0808C1D-DB70
替代型号K6T0808C1D-DB70
型号/品牌 代替类型 替代型号对比

K6T0808C1D-DB70

Samsung 三星

当前型号

当前型号

K6T0808C1D-DL70

三星

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K6T0808C1D-DB70和W24258-70LL的区别

KM62256CLP-7L

三星

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K6T0808C1D-DB70和KM62256CLP-7L的区别

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