16M x 4Bit CMOS Dynamic RAM with Extended Data Out
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle4K Ref. or 8K Ref., access time -45, -50 or -60, power consumptionNor mal or Low power are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
\- K4E660412E-JI/P3.3V, 8K Ref., SOJ
\- K4E640412E-JI/P3.3V, 4K Ref., SOJ
\- K4E660412E-TI/P3.3V, 8K Ref., TSOP
\- K4E640412E-TI/P3.3V, 4K Ref., TSOP
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
K4E660412E-JP50 Samsung 三星 | 当前型号 | 当前型号 |
MT4LC16M4H9DJ-5 镁光 | 功能相似 | K4E660412E-JP50和MT4LC16M4H9DJ-5的区别 |