K4E660412E-JP50

K4E660412E-JP50概述

16M x 4Bit CMOS Dynamic RAM with Extended Data Out

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle4K Ref. or 8K Ref., access time -45, -50 or -60, power consumptionNor mal or Low power are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using ¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Part Identification

\- K4E660412E-JI/P3.3V, 8K Ref., SOJ

\- K4E640412E-JI/P3.3V, 4K Ref., SOJ

\- K4E660412E-TI/P3.3V, 8K Ref., TSOP

\- K4E640412E-TI/P3.3V, 4K Ref., TSOP

K4E660412E-JP50中文资料参数规格
封装参数

封装 SOJ

外形尺寸

封装 SOJ

其他

产品生命周期 Obsolete

数据手册

在线购买K4E660412E-JP50
型号: K4E660412E-JP50
制造商: Samsung 三星
描述:16M x 4Bit CMOS Dynamic RAM with Extended Data Out
替代型号K4E660412E-JP50
型号/品牌 代替类型 替代型号对比

K4E660412E-JP50

Samsung 三星

当前型号

当前型号

MT4LC16M4H9DJ-5

镁光

功能相似

K4E660412E-JP50和MT4LC16M4H9DJ-5的区别

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