K4T1G084QF-BCF7

K4T1G084QF-BCF7概述

1GB F-die DDR2 SDRAM

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin DDR2-800 for general applications.

The chip is designed to comply with the following key DDR2 SDRAM fea tures such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip DriverOCD impedance adjustment and On Die Termination.


Win Source:
1Gb F-die DDR2 SDRAM


K4T1G084QF-BCF7中文资料参数规格
封装参数

封装 FBGA

外形尺寸

封装 FBGA

其他

产品生命周期 Obsolete

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买K4T1G084QF-BCF7
型号: K4T1G084QF-BCF7
制造商: Samsung 三星
描述:1GB F-die DDR2 SDRAM

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