LMBR130T1G

LMBR130T1G

反向电压VrReverse Voltage| 30V \---|--- 平均整流电流IoAVerage Rectified Current| 1A 最大正向压降VFForward VoltageVf | 470mV/0.47V 最大耗散功率PdPower dissipation| Description & Applications| • This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection • Guardring for Stress Protection • Low Forward Voltage • Surface Mount Schottky Power Rectifier 描述与应用| •金属硅功率二极管采用肖特基原则。非常适合于低电压，高频率整流，或者作为续流和极性保护。 •Guardring应力保护 •低正向电压 •表面贴装肖特基功率整流器