L2N7002LT1G

N沟道,60V,0.115A,225mW

最大源漏极电压Vds Drain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 60V 最大漏极电流Id Drain Current| 115mA/0.115A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.007Ω/Ohm @10mA,2.5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.0-2V 耗散功率Pd Power Dissipation| 300mW/0.3W Description & Applications| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS We declare that the material of product are Halogen Free and compliance with RoHS requirements. ESD Protected:1000V 描述与应用| 半导体技术数据 超高速开关应用 模拟开关应用 对产品材料无卤 符合RoHS要求。 ESD保护：1000V