LET9060F

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LET9060F概述

RF MOSFET Transistors RF Power LdmoST 60W 18dB 945MHz

The most common usage for this RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 130000 mW. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 1000 MHz.


得捷:
MOSFET N-CH 80V 12A M-250


艾睿:
The most common usage for this LET9060F RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 130000 mW. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 1000 MHz.


Chip1Stop:
Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-250


Verical:
Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-250 Loose


DeviceMart:
MOSFET N-CH 80V 12A M-250


LET9060F中文资料参数规格
技术参数

频率 945 MHz

额定电流 12 A

耗散功率 130000 mW

输出功率 75 W

增益 18 dB

测试电流 400 mA

输入电容Ciss 77pF @28VVds

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 130000 mW

额定电压 80 V

封装参数

引脚数 3

封装 M-250

外形尺寸

封装 M-250

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买LET9060F
型号: LET9060F
描述:RF MOSFET Transistors RF Power LdmoST 60W 18dB 945MHz

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