RF MOSFET Transistors RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
频率 960 MHz
额定电流 9 A
耗散功率 79 W
输出功率 59 W
增益 17.5 dB
测试电流 300 mA
输入电容Ciss 59pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 79000 mW
额定电压 80 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99