射频金属氧化物半导体场效应RF MOSFET晶体管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 170000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode.
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
LET9060STR ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
LET9060S 意法半导体 | 完全替代 | LET9060STR和LET9060S的区别 |
LET9060C 意法半导体 | 功能相似 | LET9060STR和LET9060C的区别 |