LET20045C

射频金属氧化物半导体场效应RF MOSFET晶体管 RF PWR trans Ldmost 2.0 GHz N-Ch ENH

By using a combination of metal-oxide-semiconductor technology, this RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 130000 mW. Its maximum frequency is 2000 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C. This N channel RF power MOSFET operates in enhancement mode.