LET9150

LET9150图片1
LET9150图片2
LET9150概述

RF MOSFET Transistors RF Power LdmoST 150W 20dB 860MHz

Need a MOSFET that will work in radio frequency environments? This RF amplifier made from STMicroelectronics is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 269000 mW. Its maximum frequency is 2000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.


得捷:
MOSFET N-CH 80V 20A M-246


艾睿:
Trans RF MOSFET N-CH 80V 20A 5-Pin Case M-246


Chip1Stop:
Trans RF MOSFET N-CH 80V 20A 5-Pin Case M-246


Verical:
Trans RF MOSFET N-CH 80V 20A 5-Pin Case M-246 Loose


DeviceMart:
MOSFET N-CH 80V 20A M-246


LET9150中文资料参数规格
技术参数

频率 860 MHz

耗散功率 269000 mW

输出功率 150 W

增益 20 dB

测试电流 600 mA

输入电容Ciss 68pF @32VVds

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 269000 mW

额定电压 80 V

封装参数

引脚数 5

封装 M-246

外形尺寸

封装 M-246

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买LET9150
型号: LET9150
描述:RF MOSFET Transistors RF Power LdmoST 150W 20dB 860MHz

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