LM5114BSDEVAL/NOPB

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LM5114BSDEVAL/NOPB概述

TEXAS INSTRUMENTS  LM5114BSDEVAL/NOPB  评估板, LM5114BSDEVAL/NOPB, 100V半桥增强型Gan FET开关

The is an Evaluation Board for LM5114, a single low-side gate driver with 7.6/1.3A peak sink/source drive current capability. It can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations or to drive secondary synchronous FETs in isolated topologies. The board is designed to provide the design engineer with a fully functional boost DC-DC converter to evaluate the LM5114. A 100V enhancement mode GaN FET EPC2001 is used as the boost power switch. The control circuitry is implemented with the LM5020, a 100V current mode PWM controller.

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Independent source and sink outputs for controllable rise and fall times
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4 to 12.6V Single power supply
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0.23R Open-drain pull-down sink output
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2R Open-drain pull-up source output
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Power-off pull-down clamping
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12ns Propagation delay typical
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Matching delay time between inverting and non-inverting inputs
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Up to 14V logic inputs regardless of VDD voltage
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Pin-to-pin compatible with MAX5048
LM5114BSDEVAL/NOPB中文资料参数规格
技术参数

输出接口数 1

输出电压 75 V

输出电流 2 A

开关频率 500 kHz

输入电压 4V ~ 12.6V

其他

产品生命周期 Unknown

制造应用 工业, 测试与测量

符合标准

RoHS标准 RoHS Compliant

含铅标准 Contains Lead

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

数据手册

在线购买LM5114BSDEVAL/NOPB
型号: LM5114BSDEVAL/NOPB
制造商: TI 德州仪器
描述:TEXAS INSTRUMENTS  LM5114BSDEVAL/NOPB  评估板, LM5114BSDEVAL/NOPB, 100V半桥增强型Gan FET开关

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